Input Capacitance (Cies) @ Vce 39nF @ 25V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 630 ns
Vce(on) (Max) @ Vge, Ic 3.75V @ 15V, 600A
Power Dissipation-Max (Abs) 3700W
Current - Collector (Ic) (Max) 600A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 5mA
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Configuration 2 Independent
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~125°C