Operating Temperature -40°C~125°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration 2 Independent
Element Configuration Dual
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 600A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Power Dissipation-Max (Abs) 3700W
Vce(on) (Max) @ Vge, Ic 3.75V @ 15V, 600A
Turn Off Time-Nom (toff) 630 ns
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 39nF @ 25V