FF600R12IE4BOSA1
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 600A 3350W
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Buying Options
Total Price: USD $882.98
Unit Price: USD $882.983018
≥1 USD $882.983018
≥201 USD $352.316715
≥501 USD $340.543941
≥999 USD $334.726481
Inventory: 6489
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status ROHS3 Compliant
Technical
VCEsat-Max 2.05 V
Input Capacitance (Cies) @ Vce 37nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 1020 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 600A
Turn On Time 410 ns
Power Dissipation-Max (Abs) 3350W
Current - Collector (Ic) (Max) 600A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 5mA
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 3350W
Case Connection ISOLATED
Element Configuration Dual
Configuration Half Bridge
Number of Elements 2
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X7
Pin Count 11
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 10
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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