FF450R12ME4PB11BOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 450A
PDF
/
Buying Options
Total Price: USD $170.32
Unit Price: USD $170.324
≥1 USD $170.324
≥10 USD $159.52493
≥100 USD $153.52773
Inventory: 16
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Dimensions
Height 17.5mm
Technical
Input Capacitance (Cies) @ Vce 28nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 740 ns
Continuous Collector Current 450A
Max Junction Temperature (Tj) 150°C
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 450A
Turn On Time 290 ns
Collector Emitter Saturation Voltage 1.75V
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 3mA
Collector Emitter Voltage (VCEO) 1.2kV
Turn-Off Delay Time 490 ns
Input Standard
Polarity/Channel Type N-CHANNEL
Turn On Delay Time 190 ns
Case Connection ISOLATED
Configuration 2 Independent
Number of Elements 2
JESD-30 Code R-XUFM-X11
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Number of Terminations 11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2002
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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