Input Capacitance (Cies) @ Vce 24.5nF @ 25V
Gate-Emitter Voltage-Max 20V
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 930 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 300A
Power Dissipation-Max (Abs) 1800W
Current - Collector (Ic) (Max) 440A
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector Cutoff (Max) 1mA
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Element Configuration Dual
Configuration 2 Independent
Terminal Form UNSPECIFIED
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C