FF300R12KE3HOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT Array & Module Transistor, N Channel, 440 A, 1.7 V, 1.45 kW, 1.2 kV, Module
PDF
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Buying Options
Total Price: USD $311.26
Unit Price: USD $311.2637
≥1 USD $311.2637
Inventory: 95
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 7
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~125°C
Published 2002
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 7
ECCN Code EAR99
Max Power Dissipation 1.45kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Power Dissipation 1.45kW
Case Connection ISOLATED
Power - Max 1450W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 480A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 440A
Collector Emitter Saturation Voltage 1.7V
Turn On Time 400 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 300A
Turn Off Time-Nom (toff) 830 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 21nF @ 25V
Dimensions
Height 30.9mm
Length 106.4mm
Width 61.4mm
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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