FF225R12ME4B11BPSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 1200V 225A
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 13nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 600 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 225A
Turn On Time 220 ns
Current - Collector (Ic) (Max) 320A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 3mA
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 1050W
Case Connection ISOLATED
Element Configuration Dual
Configuration 2 Independent
Number of Elements 2
JESD-30 Code R-XUFM-X11
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Additional Feature UL APPROVED
ECCN Code EAR99
Number of Terminations 11
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Published 2002
Packaging Bulk
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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