FF200R12KE3HOSA1
RoHS
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Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT Array & Module Transistor, N Channel, 295 A, 1.7 V, 1.05 kW, 1.2 kV, Module
PDF
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Buying Options
Total Price: USD $280.35
Unit Price: USD $280.350102
≥1 USD $280.350102
≥200 USD $111.861706
≥500 USD $108.12388
≥1000 USD $106.276629
Inventory: 1102
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 14nF @ 25V
NTC Thermistor Yes
Turn Off Time-Nom (toff) 830 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Turn On Time 400 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 5mA
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Power - Max 1050W
Case Connection ISOLATED
Element Configuration Dual
Configuration 2 Independent
Number of Elements 2
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X7
Pin Count 7
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2002
Operating Temperature -40°C~125°C
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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