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FF150R17ME3GBOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE VCES 1200V 150A
PDF
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Buying Options
Total Price: USD $318.87
Unit Price: USD $318.8719
≥1 USD $318.8719
≥200 USD $123.399471
≥500 USD $119.062962
≥1000 USD $116.92031
Inventory: 1190
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Mount PCB, Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 11
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~125°C
Published 2002
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
ECCN Code EAR99
Max Power Dissipation 1.05kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 11
Qualification Status Not Qualified
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1050W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 240A
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 366 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 150A
Turn Off Time-Nom (toff) 1300 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 13.5nF @ 25V

Dimensions

Height 17mm
Length 122.1mm
Width 62mm

Compliance

RoHS Status RoHS Compliant
Lead Free Contains Lead

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