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FF150R12YT3BOMA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MOD 1200V 200A 625W
PDF
/
Buying Options
Total Price: USD $2.25
Unit Price: USD $2.248998
≥1 USD $2.248998
≥200 USD $0.870453
≥500 USD $0.840256
≥1000 USD $0.824501
Inventory: 1170
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount PCB, Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 2
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~125°C
Published 2002
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 24
ECCN Code EAR99
Max Power Dissipation 625W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 24
Qualification Status Not Qualified
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 625W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 200A
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 330 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 150A
Turn Off Time-Nom (toff) 610 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 10.5nF @ 25V

Dimensions

Height 17mm
Length 55.9mm
Width 45.6mm

Compliance

RoHS Status RoHS Compliant
Lead Free Contains Lead

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