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FF1200R17KE3NOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE VCES 1700V 1200A
PDF
/
Buying Options
Total Price: USD $2900.94
Unit Price: USD $2900.936576
≥1 USD $2900.936576
≥200 USD $1157.49334
≥500 USD $1118.813993
≥1000 USD $1099.702108
Inventory: 8992
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status RoHS Compliant

Technical

Input Capacitance (Cies) @ Vce 110nF @ 25V
NTC Thermistor No
Turn Off Time-Nom (toff) 2100 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 1200A
Turn On Time 1050 ns
Collector Emitter Saturation Voltage 2V
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Current - Collector Cutoff (Max) 5mA
Max Collector Current 1.6kA
Collector Emitter Voltage (VCEO) 1.7kV
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Power - Max 595000W
Case Connection ISOLATED
Power Dissipation 5.95kW
Element Configuration Dual
Configuration Single Chopper
Number of Elements 2
Pin Count 10
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 10
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code no
Published 2002
Operating Temperature -40°C~125°C

Physical

Transistor Element Material SILICON
Number of Pins 10
Package / Case Module
Mounting Type Chassis Mount
Mount Screw

Supply Chain

Factory Lead Time 12 Weeks

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