FF1200R12KE3NOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 1200V 1200A
PDF
/
Inventory: 4143
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 86nF @ 25V
NTC Thermistor No
Turn Off Time-Nom (toff) 1140 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 1200A
Turn On Time 880 ns
Collector Emitter Saturation Voltage 1.7V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 5mA
Max Collector Current 1.6kA
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Power - Max 5000W
Case Connection ISOLATED
Power Dissipation 5kW
Element Configuration Dual
Configuration 2 Independent
Number of Elements 2
Pin Count 10
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 10
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code no
Published 2002
Operating Temperature -40°C~125°C
Physical
Transistor Element Material SILICON
Number of Pins 10
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 36 Weeks
Alternative Model
Recommended For You
FF1200R12KE3NOSA1+price,FF1200R12KE3NOSA1+datasheet,FF1200R12KE3NOSA1+in stock,buy+FF1200R12KE3NOSA1,finder+FF1200R12KE3NOSA1,FF1200R12KE3NOSA1+tutorials,FF1200R12KE3NOSA1+download