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FF100R12RT4HOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT Modules IGBT Module w/ IGBT & Diode
PDF
/
Buying Options
Total Price: USD $67.93
Unit Price: USD $67.92595
≥1 USD $67.92595
≥10 USD $55.73365
≥100 USD $53.9923
≥500 USD $52.25
≥1000 USD $50.50865
Inventory: 1139
Minimum: 1
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Technical Details

Technical

Input Capacitance (Cies) @ Vce 630nF @ 25V
NTC Thermistor No
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 490 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 100A
Turn On Time 185 ns
Current - Collector (Ic) (Max) 100A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 1mA
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 555W
Case Connection ISOLATED
Element Configuration Dual
Configuration 2 Independent
Number of Elements 2
JESD-30 Code R-XUFM-X5
Pin Count 7
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~150°C

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Physical

Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount

Supply Chain

Factory Lead Time 16 Weeks

Alternative Model

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