FD1000R17IE4BOSA2
RoHS
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Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Module Chassis Mount N-CHANNEL Single IGBT Module 81nF @ 25V 5mA 6.25kW 1890ns
PDF
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Buying Options
Total Price: USD $1180.22
Unit Price: USD $1180.219639
≥1 USD $1180.219639
≥200 USD $456.730339
≥500 USD $440.678824
≥1000 USD $432.747595
Inventory: 1238
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Input Capacitance (Cies) @ Vce 81nF @ 25V
NTC Thermistor Yes
Turn Off Time-Nom (toff) 1890 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 1000A
Turn On Time 720 ns
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Current - Collector Cutoff (Max) 5mA
Max Collector Current 1.39kA
Collector Emitter Voltage (VCEO) 1.7kV
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 6250W
Case Connection ISOLATED
Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 12
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 6.25kW
ECCN Code EAR99
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 12
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 50 Weeks
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