F4100R12KS4BOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 1200V 100A
PDF
/
Buying Options
Total Price: USD $471.77
Unit Price: USD $471.770922
≥1 USD $471.770922
≥200 USD $188.239663
≥500 USD $181.949559
≥1000 USD $178.841925
Inventory: 1124
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 6.8nF @ 25V
NTC Thermistor Yes
Turn Off Time-Nom (toff) 390 ns
Vce(on) (Max) @ Vge, Ic 3.75V @ 15V, 100A
Turn On Time 190 ns
Current - Collector (Ic) (Max) 130A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 5mA
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 660W
Case Connection ISOLATED
Configuration Three Phase Inverter
Number of Elements 4
JESD-30 Code R-XUFM-X26
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Additional Feature UL RECOGNIZED
ECCN Code EAR99
Number of Terminations 26
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Active
Operating Temperature -40°C~125°C
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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