F3L100R12W2H3B11BPSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 600V 200A
PDF
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Buying Options
Total Price: USD $422.27
Unit Price: USD $422.2712
≥1 USD $422.2712
Inventory: 305
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Contact Plating Tin
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 32
ECCN Code EAR99
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X32
Number of Elements 4
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 375W
Transistor Application GENERAL PURPOSE
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 100A
Turn On Time 175 ns
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 50A
Turn Off Time-Nom (toff) 465 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 6.15nF @ 25V
Compliance
RoHS Status RoHS Compliant
Lead Free Contains Lead
Alternative Model
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