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DF900R12IP4DBOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description PRIMPACK IGBT MOD VCE 1200V 900A
PDF
/
Buying Options
Total Price: USD $1013.79
Unit Price: USD $1013.788558
≥1 USD $1013.788558
≥201 USD $404.508429
≥501 USD $390.992123
≥999 USD $384.312088
Inventory: 7336
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status RoHS Compliant
REACH SVHC No SVHC

Technical

Input Capacitance (Cies) @ Vce 54nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 1300 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 900A
Turn On Time 370 ns
Current - Collector (Ic) (Max) 900A
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 5mA
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 5100W
Case Connection ISOLATED
Element Configuration Single
Configuration Single Chopper
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X6
Pin Count 10
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 5.1kW
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~150°C

Physical

Transistor Element Material SILICON
Number of Pins 10
Package / Case Module
Mounting Type Chassis Mount
Mount Screw

Alternative Model

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