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DF650R17IE4BOSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MOD 1700V 930A 4150W
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Buying Options
Total Price: USD $815.74
Unit Price: USD $815.742844
≥1 USD $815.742844
≥200 USD $315.682866
≥500 USD $304.587548
≥1000 USD $299.106191
Inventory: 8706
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC

Technical

Input Capacitance (Cies) @ Vce 54nF @ 25V
NTC Thermistor Yes
Turn Off Time-Nom (toff) 1870 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 650A
Turn On Time 720 ns
Collector Emitter Saturation Voltage 2V
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Current - Collector Cutoff (Max) 5mA
Max Collector Current 930A
Collector Emitter Voltage (VCEO) 1.7kV
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 4150W
Case Connection ISOLATED
Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 10
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 4.15kW
ECCN Code EAR99
Number of Terminations 10
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Series PrimePack?2
Published 2002
Operating Temperature -40°C~150°C

Physical

Transistor Element Material SILICON
Number of Pins 10
Package / Case Module
Mounting Type Chassis Mount
Mount Screw

Supply Chain

Factory Lead Time 14 Weeks

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