DF200R12KE3HOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 1200V 200A
PDF
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Buying Options
Total Price: USD $861.93
Unit Price: USD $861.93405
≥1 USD $861.93405
Inventory: 207
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 14nF @ 25V
NTC Thermistor No
Turn Off Time-Nom (toff) 830 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Turn On Time 400 ns
Collector Emitter Saturation Voltage 1.7V
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 5mA
Max Collector Current 295A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Power - Max 1040W
Case Connection ISOLATED
Power Dissipation 1.04kW
Configuration Single
Number of Elements 1
Pin Count 5
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2012
Operating Temperature -40°C~125°C
Physical
Transistor Element Material SILICON
Number of Pins 5
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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