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DF160R12W2H3_B11

Infineon Technologies
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE VCES 1200V 150A
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Collector-Emitter Voltage-Max 1200V
Turn Off Time-Nom (toff) 375 ns
Collector Current-Max (IC) 50A
Turn On Time 49 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection ISOLATED
Configuration COMPLEX
Number of Elements 4
JESD-30 Code R-XUFM-X19
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Additional Feature UL APPROVED
Number of Terminations 19
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Published 2013

Physical

Transistor Element Material SILICON
Surface Mount NO

Supply Chain

Factory Lead Time 28 Weeks

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