DF150R12RT4HOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 1200V 150A
PDF
/
Buying Options
Total Price: USD $159.84
Unit Price: USD $159.841636
≥1 USD $159.841636
≥200 USD $61.857284
≥500 USD $59.683121
≥1000 USD $58.609169
Inventory: 1113
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 9.3nF @ 25V
NTC Thermistor No
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 490 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 150A
Turn On Time 185 ns
Collector Emitter Saturation Voltage 2.15V
Current - Collector (Ic) (Max) 150A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 1mA
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Case Connection ISOLATED
Power Dissipation 790W
Element Configuration Single
Configuration Single Chopper
Number of Elements 1
JESD-30 Code R-XUFM-X4
Pin Count 7
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Published 2002
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 5
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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