DDB6U75N16W1RBOMA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 69A 335W
PDF
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Buying Options
Total Price: USD $139.88
Unit Price: USD $139.875053
≥1 USD $139.875053
≥192 USD $55.811379
≥504 USD $53.945748
≥1008 USD $53.025405
Inventory: 1233
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
Dimensions
Width 33.8mm
Length 48mm
Height 12mm
Technical
Input Capacitance (Cies) @ Vce 2.8nF @ 25V
NTC Thermistor Yes
Turn Off Time-Nom (toff) 630 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 50A
Turn On Time 137 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Max Repetitive Reverse Voltage (Vrrm) 1.6kV
Peak Reverse Current 1mA
Max Collector Current 69A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Forward Current 65A
Power - Max 335W
Case Connection ISOLATED
Element Configuration Single
Configuration Three Phase Inverter
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X27
Pin Count 27
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
ECCN Code EAR99
Number of Terminations 27
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
Published 2006
Operating Temperature -40°C~150°C
Physical
Transistor Element Material SILICON
Number of Pins 10
Package / Case Module
Mounting Type Chassis Mount
Mount PCB, Through Hole
Contact Plating Tin
Supply Chain
Factory Lead Time 16 Weeks
Alternative Model
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