DDB6U75N16W1RB11BOMA1
RoHS
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Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 69A 335W
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X11
Number of Elements 1
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 335W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Max Repetitive Reverse Voltage (Vrrm) 1.6kV
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 69A
Turn On Time 137 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 50A
Turn Off Time-Nom (toff) 630 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2.8nF @ 25V
Compliance
RoHS Status RoHS Compliant
Lead Free Contains Lead
Alternative Model
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