BSM75GB170DN2HOSA1
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT 1700V 110A 625W MODULE
PDF
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Buying Options
Total Price: USD $106.61
Unit Price: USD $106.609369
≥1 USD $106.609369
≥10 USD $100.574878
≥100 USD $94.881961
≥500 USD $89.511278
≥1000 USD $84.444604
Inventory: 1169
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 11nF @ 25V
NTC Thermistor No
Turn Off Time-Nom (toff) 740 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A
Turn On Time 550 ns
Input Capacitance 11nF
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Breakdown Voltage 1.7kV
Max Collector Current 110A
Collector Emitter Voltage (VCEO) 3.9V
Input Standard
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power - Max 625W
Case Connection ISOLATED
Element Configuration Dual
Configuration Half Bridge
Number of Elements 2
JESD-30 Code R-XUFM-X7
Pin Count 7
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 625W
ECCN Code EAR99
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
Published 1999
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 34
Package / Case Module
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Alternative Model
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