BSM50GD120DN2BOSA1
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT 2 LOW POWER ECONO2-2
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Buying Options
Total Price: USD $2.25
Unit Price: USD $2.248998
≥1 USD $2.248998
≥200 USD $0.870453
≥500 USD $0.840256
≥1000 USD $0.824501
Inventory: 8389
Minimum: 1
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Technical Details
Technical
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 17
Number of Elements 6
Configuration Full Bridge
Power Dissipation 350W
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 72A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 50A
Turn Off Time-Nom (toff) 450 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 3.3nF @ 25V
Max Power Dissipation 350W
ECCN Code EAR99
Number of Terminations 17
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Published 2007
Operating Temperature 150°C TJ
Dimensions
Height 17mm
Length 107.5mm
Width 45mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Number of Pins 17
Package / Case Module
Mounting Type Chassis Mount
Mount Screw, Through Hole
Alternative Model
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