BSM35GD120DN2
RoHS
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Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1.2KV 50A 17-Pin ECONOPACK 2
PDF
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Buying Options
Total Price: USD $80.54
Unit Price: USD $80.53815
≥1 USD $80.53815
≥10 USD $78.0216
≥100 USD $75.50505
≥500 USD $72.98755
≥1000 USD $65.43695
Inventory: 2305
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 17
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Published 1999
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 17
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 280W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 17
Number of Elements 6
Configuration Three Phase Inverter
Power Dissipation 280W
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.7V
Turn On Time 120 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 35A
Turn Off Time-Nom (toff) 450 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2nF @ 25V
VCEsat-Max 3.2 V
Dimensions
Height 17mm
Length 107.5mm
Width 45.5mm
Compliance
RoHS Status RoHS Compliant
Alternative Model
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