BSM30GD60DLCE3224
RoHS
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Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT Modules N-CH 600V 40A
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
VCEsat-Max 2.45 V
Input Capacitance (Cies) @ Vce 1.3nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type NPT
Turn Off Time-Nom (toff) 103 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 30A
Turn On Time 39 ns
Collector Emitter Saturation Voltage 1.95V
Current - Collector (Ic) (Max) 40A
Current - Collector Cutoff (Max) 500μA
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 600V
Input Standard
Polarity/Channel Type N-CHANNEL
Case Connection ISOLATED
Power Dissipation 135W
Configuration Single
Number of Elements 6
Pin Count 17
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 17
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2000
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 17
Package / Case Module
Mounting Type Chassis Mount
Mount Screw
Alternative Model
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