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Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT Modules 1200V 150A FL BRIDGE
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Technical Details

Physical

Surface Mount NO
Number of Terminals 35
Transistor Element Material SILICON

Technical

Pbfree Code icon-pbfree no
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 35
JESD-30 Code R-XUFM-X35
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 6
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 700W
Turn On Time 340 ns
Collector Current-Max (IC) 200A
Turn Off Time-Nom (toff) 610 ns
Collector-Emitter Voltage-Max 1200V
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.2 V

Compliance

RoHS Status RoHS Compliant

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