FP50R06W2E3
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
PDF
/
Buying Options
Total Price: USD $50.56
Unit Price: USD $50.562
≥1 USD $50.562
≥10 USD $47.7
≥100 USD $45
Inventory: 367
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
VCEsat-Max 1.9 V
Gate-Emitter Voltage-Max 20V
Collector-Emitter Voltage-Max 600V
Turn Off Time-Nom (toff) 470 ns
Collector Current-Max (IC) 65A
Turn On Time 85 ns
Power Dissipation-Max (Abs) 175W
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection ISOLATED
Configuration COMPLEX
Number of Elements 7
Operating Temperature (Max) 175°C
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X35
Pin Count 35
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Pbfree Code icon-pbfree yes
Physical
Transistor Element Material SILICON
Number of Terminals 35
Surface Mount NO
Alternative Model
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