FF1200R12KE3
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
N-CHANNEL SEPARATE 2ELEMENTS WITH BUILT-IN DIODE 10 EAR99 IGBT Module 1600A 5000W 1140ns 1200V
PDF
/
Inventory: 6003
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
VCEsat-Max 2.15 V
Gate-Emitter Voltage-Max 20V
Collector-Emitter Voltage-Max 1200V
Turn Off Time-Nom (toff) 1140 ns
Collector Current-Max (IC) 1600A
Turn On Time 880 ns
Power Dissipation-Max (Abs) 5000W
Polarity/Channel Type N-CHANNEL
Case Connection ISOLATED
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Elements 2
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X10
Pin Count 10
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1
Pbfree Code icon-pbfree no
Physical
Transistor Element Material SILICON
Number of Terminals 10
Surface Mount NO
Recommended For You
FF1200R12KE3+price,FF1200R12KE3+datasheet,FF1200R12KE3+in stock,buy+FF1200R12KE3,finder+FF1200R12KE3,FF1200R12KE3+tutorials,FF1200R12KE3+download