Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 450 ns
Collector Emitter Saturation Voltage 1.95V
Max Collector Current 150A
Collector Emitter Voltage (VCEO) 650V
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Power Dissipation-Max 430W
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Number of Terminations 35