DF1400R12IP4D
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT, HIG POW, 1200V, 1400A
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
VCEsat-Max 2.1 V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 1200 ns
Collector Current-Max (IC) 1400A
Turn On Time 340 ns
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Voltage (VCEO) 1.75V
Polarity/Channel Type N-CHANNEL
Halogen Free Not Halogen Free
Transistor Application POWER CONTROL
Case Connection ISOLATED
Element Configuration Single
Power Dissipation-Max 7.7kW
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X6
Pin Count 12
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1
Part Status Active
Pbfree Code yes
Published 2002
Physical
Number of Pins 12
Surface Mount NO
Package / Case Module
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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