VP0808B-E3
RoHS 
RoHS compliant
RoHS compliantPackage TO-205AD, TO-39-3 Metal Can
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 80V 0.88A TO-205
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Technical Details
Supply Chain
Factory Lead Time 9 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -280mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 6.25W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 880mA Ta
Rise Time 30ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) -3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.88A
Drain-source On Resistance-Max 5Ohm
Drain to Source Breakdown Voltage -80V
Feedback Cap-Max (Crss) 25 pF
Dimensions
Height 6.6mm
Length 9.4mm
Width 8.15mm
Compliance
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
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