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SUM90P10-19-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 100V 90A D2PAK
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 13.6W Ta 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 13.6W
Case Connection DRAIN
Turn On Delay Time 30 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 50V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Rise Time 720ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 610 ns
Turn-Off Delay Time 125 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 90A
Drain to Source Breakdown Voltage -100V
Pulsed Drain Current-Max (IDM) 90A

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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