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SUM36N20-54P-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 200V 36A 166W
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package TO-263 (D2Pak)

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.12W Ta 166W Tc
Element Configuration Single
Power Dissipation 3.12W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 53mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 127nC @ 15V
Rise Time 170ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V 15V
Vgs (Max) ±25V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 200V
Input Capacitance 3.1nF
Drain to Source Resistance 44mOhm
Rds On Max 53 mΩ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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