SIHU5N50D-E3
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS
PDF
/
Buying Options
Total Price: USD $0.67
Unit Price: USD $0.67165
≥1 USD $0.67165
≥10 USD $0.551
≥100 USD $0.5339
≥500 USD $0.5168
≥1000 USD $0.4997
Inventory: 1160
Minimum: 1
-
+
Technical Details
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC Unknown
Radiation Hardening No
Technical
Nominal Vgs 3 V
Avalanche Energy Rating (Eas) 28.8 mJ
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 5.3A
Turn-Off Delay Time 14 ns
Fall Time (Typ) 11 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 11ns
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.3A Tc
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 12 ns
Case Connection DRAIN
Power Dissipation 104W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 104W Tc
Number of Channels 1
Number of Elements 1
Technology MOSFET (Metal Oxide)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 329.988449mg
Number of Pins 3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
Recommended For You
SIHU5N50D-E3+price,SIHU5N50D-E3+datasheet,SIHU5N50D-E3+in stock,buy+SIHU5N50D-E3,finder+SIHU5N50D-E3,SIHU5N50D-E3+tutorials,SIHU5N50D-E3+download