SIHP8N50D-E3
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS
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Buying Options
Total Price: USD $1.46
Unit Price: USD $1.4608
≥1 USD $1.4608
≥10 USD $1.175856
≥100 USD $0.931744
≥500 USD $0.789765
≥1000 USD $0.64335
≥3000 USD $0.605634
Inventory: 1037
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 156W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 850m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 527pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8.7A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 8.7A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 5V
Drain-source On Resistance-Max 0.85Ohm
Drain to Source Breakdown Voltage 500V
Avalanche Energy Rating (Eas) 29 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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