SIHD6N62E-GE3
RoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
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Buying Options
Total Price: USD $1.13
Unit Price: USD $1.12613
≥1 USD $1.12613
≥10 USD $1.0624
≥100 USD $1.002255
≥500 USD $0.945525
≥1000 USD $0.892008
Inventory: 1183
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package D-PAK (TO-252AA)
Weight 1.437803g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 78W Tc
Element Configuration Single
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 578pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 620V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 578pF
Drain to Source Resistance 900mOhm
Rds On Max 900 mΩ
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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