SIHA24N65EF-E3
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CHANNEL 650V 24A TO220
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Technical Details
Supply Chain
Factory Lead Time 21 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series E
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 39W Tc
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 156m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2774pF @ 100V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 122nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 24A
Drain-source On Resistance-Max 0.156Ohm
Pulsed Drain Current-Max (IDM) 65A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 691 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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