DS Breakdown Voltage-Min 25V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 65 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 12.5V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 1.4m Ω @ 20A, 10V
Transistor Application SWITCHING
Case Connection DRAIN SOURCE
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 5.2W Ta 125W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ