SIE860DF-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage 10-PolarPAK? (M)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 60A POLARPAK
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 125 mJ
Pulsed Drain Current-Max (IDM) 80A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0021Ohm
Drain Current-Max (Abs) (ID) 60A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 38A
Turn-Off Delay Time 50 ns
Fall Time (Typ) 30 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 20ns
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 2.1m Ω @ 21.7A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 35 ns
Case Connection DRAIN
Power Dissipation 5.2W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 5.2W Ta 104W Tc
Number of Elements 1
JESD-30 Code R-XDSO-N4
Pin Count 10
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish PURE MATTE TIN
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series TrenchFET?
Published 2016
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 10
Package / Case 10-PolarPAK? (M)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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