SIE854DF-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage 10-PolarPAK? (L)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 60A POLARPAK
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK? (L)
Number of Pins 10
Supplier Device Package 10-PolarPAK? (L)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Resistance 14.2mOhm
Max Operating Temperature 150°C
Min Operating Temperature -50°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 5.2W Ta 125W Tc
Element Configuration Single
Power Dissipation 5.2W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14.2mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id 4.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 50V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 13.2A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Input Capacitance 3.1nF
Drain to Source Resistance 14.2mOhm
Rds On Max 14.2 mΩ
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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