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SIE830DF-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 10-PolarPAK? (S)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 50A 10-POLARPAK
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Inventory: 203
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK? (S)
Number of Pins 10
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series WFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 10
JESD-30 Code R-PDSO-N5
Number of Elements 1
Power Dissipation-Max 5.2W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 15V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V
Rise Time 105ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 95 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 27A
Drain-source On Resistance-Max 0.0042Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 45 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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