SIE810DF-T1-E3
RoHS 
RoHS compliant
RoHS compliantPackage 10-PolarPAK? (L)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 60A 10-POLARPAK
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Buying Options
Total Price: USD $3.56
Unit Price: USD $3.555333
≥1 USD $3.555333
≥200 USD $1.419245
≥500 USD $1.371981
≥1000 USD $1.348348
Inventory: 9421
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 5.16mm
Length 6.15mm
Height 800μm
Technical
Avalanche Energy Rating (Eas) 36 mJ
Drain to Source Breakdown Voltage 20V
Drain Current-Max (Abs) (ID) 45A
Gate to Source Voltage (Vgs) 12V
Threshold Voltage 1.3V
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 100 ns
Fall Time (Typ) 10 ns
Vgs (Max) ±12V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Rise Time 70 ns
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 1.4m Ω @ 25A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 20 ns
Case Connection DRAIN
Power Dissipation 125mW
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 5.2W Ta 125W Tc
Number of Channels 1
Number of Elements 1
JESD-30 Code R-XDSO-N4
Pin Count 10
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Resistance 20MOhm
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series TrenchFET?
Published 2015
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 10
Package / Case 10-PolarPAK? (L)
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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