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SIE806DF-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 10-PolarPAK? (L)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V 60A 125W 1.7mohm @ 10V
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Buying Options
Total Price: USD $17.35
Unit Price: USD $17.35365
≥1 USD $17.35365
≥10 USD $14.23955
≥100 USD $13.794
≥500 USD $13.3494
≥1000 USD $12.90385
Inventory: 1162
Minimum: 1
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK? (L)
Number of Pins 10
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 1.7mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 10
JESD-30 Code R-PDSO-N4
Number of Elements 1
Power Dissipation-Max 5.2W Ta 125W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5.2W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 1.3V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 202A
Drain to Source Breakdown Voltage 30V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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