SI8806DB-T2-E1
RoHS 
RoHS compliant
RoHS compliantPackage 4-XFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
VISHAY SI8806DB-T2-E1 MOSFET Transistor, N Channel, 3.9 A, 12 V, 0.035 ohm, 4.5 V, 400 mV
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Buying Options
Total Price: USD $0.39
Unit Price: USD $0.3872
≥1 USD $0.3872
≥10 USD $0.33264
≥100 USD $0.231088
≥500 USD $0.180435
≥1000 USD $0.146652
Inventory: 1200
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 44 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA
Number of Pins 4
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Power Dissipation 900mW
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 43m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 8V
Rise Time 20ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 3.9A
Threshold Voltage 400mV
Gate to Source Voltage (Vgs) 8V
Dimensions
Height 213μm
Length 840μm
Width 840μm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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