Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 54m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 5V
Drain to Source Breakdown Voltage 8V