SI8487DB-T1-E1
RoHS 
RoHS compliant
RoHS compliantPackage 4-UFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET -30V 31mOhm@10V 7.7A P-Ch G-III
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Buying Options
Total Price: USD $0.58
Unit Price: USD $0.5808
≥1 USD $0.5808
≥10 USD $0.49544
≥100 USD $0.344344
≥500 USD $0.26884
≥1000 USD $0.218513
Inventory: 1758
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 21 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA
Number of Pins 4
Technical
Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2014
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 1.1W Ta 2.7W Tc
Element Configuration Single
Turn On Delay Time 7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 31m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2240pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 290 ns
Continuous Drain Current (ID) -7.7A
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -30V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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