SI8483DB-T2-E1
RoHS 
RoHS compliant
RoHS compliantPackage 6-UFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET -12V [email protected] 16A P-Ch G-III
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Buying Options
Total Price: USD $0.48
Unit Price: USD $0.4752
≥1 USD $0.4752
≥10 USD $0.4048
≥100 USD $0.281424
≥500 USD $0.219754
≥1000 USD $0.178622
Inventory: 1254
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 21 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.77W Ta 13W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.77W
Turn On Delay Time 20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1840pF @ 6V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 20 ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) -16A
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.035Ohm
Pulsed Drain Current-Max (IDM) 25A
Dimensions
Height 310μm
Length 1.5mm
Width 1mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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