SI8475EDB-T1-E1
RoHS 
RoHS compliant
RoHS compliantPackage 4-XFBGA, CSPBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V MICROFOOT
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-XFBGA, CSPBGA
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max 1.1W Ta 2.7W Tc
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 32m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 80 μs
Continuous Drain Current (ID) 7.7A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.051Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 25A
Avalanche Energy Rating (Eas) 80 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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